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Lookup NU author(s): Dr Sarah Olsen,
Professor Anthony O'Neill,
Dr Sanatan Chattopadhyay,
Dr Kelvin Kwa,
Dr Jun Zhang
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The performance of single and dual channel strained Si n-MOSFETs fabricated using CMOS process. A TEM image of the strained Si/gate oxide interface was examined. Capacitance-voltage measurement on MOS capacitor was investigated. The gate oxide interface trap density as a function of band gap energy for MOS capacitor fabricated on the single and dual channel architectures was illustrated. Field effect mobility was investigated as a function of vertical effective field on MOSFETs having 10 mu m gate lengths and 5 mu m gate widths. (6 References).
Author(s): Olsen SH, O'Neill AG, Chattopadhay S, Driscoll LS, Kwa KSK, Paul DJ, Zhang J
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741). IEEE. 2003
Year of Conference: 2003