Toggle Main Menu Toggle Search

Open Access padlockePrints

Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness

Lookup NU author(s): Dr Kelvin Kwa, Dr Sarah Olsen, Professor Anthony O'Neill, Dr Sanatan Chattopadhyay, Goutan Dalapati, Luke Driscoll


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Kwa KSK, Olsen SH, O'Neill AG, Chattopadhyay S, Dalapati G, Driscoll LS

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Proceedings of the Electronic Materials Conference

Year of Conference: 2005