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Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness

Lookup NU author(s): Dr Kelvin Kwa, Dr Sarah Olsen, Professor Anthony O'Neill, Dr Sanatan Chattopadhyay, Goutan Dalapati, Luke Driscoll

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Author(s): Kwa KSK, Olsen SH, O'Neill AG, Chattopadhyay S, Dalapati G, Driscoll LS

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Proceedings of the Electronic Materials Conference

Year of Conference: 2005

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