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Lookup NU author(s): Dr Sarah Olsen,
Professor Anthony O'Neill,
Dr Piotr Dobrosz,
Professor Steve BullORCiD,
Dr Sanatan Chattopadhyay,
Dr Kelvin Kwa
This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Institute of Physics, 2005.
For re-use rights please refer to the publisher's terms and conditions.
A study was conducted on the strained Si and SiGe metal-oxide field-effect transistors (MOSFET), fabricated using a thermal budget. It was found that the Ge content in the SiGe virtual substrate varied from 10% to 30%. High levels of strain reduced the critical thickness of strained Si above which Si became unstable and susceptible to relaxation during high-temperature device fabrication. The results identified the appropriate parameter window for virtual substrate Ge composition if acceptable MOSFET on-state performance, off-state performance, device yield and reliability were to be achieved using a thermal budget process.
Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK
Publication type: Article
Publication status: Published
Journal: Journal of Applied Physics
Print publication date: 01/01/2005
Date deposited: 15/09/2016
ISSN (print): 0021-8979
ISSN (electronic): 1520-8850
Publisher: American Institute of Physics
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