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Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill, Dr Piotr Dobrosz, Professor Steve BullORCiD, Luke Driscoll, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa



This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Institute of Physics, 2005.

For re-use rights please refer to the publisher's terms and conditions.


A study was conducted on the strained Si and SiGe metal-oxide field-effect transistors (MOSFET), fabricated using a thermal budget. It was found that the Ge content in the SiGe virtual substrate varied from 10% to 30%. High levels of strain reduced the critical thickness of strained Si above which Si became unstable and susceptible to relaxation during high-temperature device fabrication. The results identified the appropriate parameter window for virtual substrate Ge composition if acceptable MOSFET on-state performance, off-state performance, device yield and reliability were to be achieved using a thermal budget process.

Publication metadata

Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2005

Volume: 97

Issue: 11

Pages: 1-9

Print publication date: 01/01/2005

Date deposited: 15/09/2016

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics


DOI: 10.1063/1.1922582


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