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Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill, Dr Piotr Dobrosz, Professor Steve BullORCiD, Luke Driscoll, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa

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This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Institute of Physics, 2005.

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Abstract

A study was conducted on the strained Si and SiGe metal-oxide field-effect transistors (MOSFET), fabricated using a thermal budget. It was found that the Ge content in the SiGe virtual substrate varied from 10% to 30%. High levels of strain reduced the critical thickness of strained Si above which Si became unstable and susceptible to relaxation during high-temperature device fabrication. The results identified the appropriate parameter window for virtual substrate Ge composition if acceptable MOSFET on-state performance, off-state performance, device yield and reliability were to be achieved using a thermal budget process.

Publication metadata

Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2005

Volume: 97

Issue: 11

Pages: 1-9

Print publication date: 01/01/2005

Date deposited: 15/09/2016

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1922582

DOI: 10.1063/1.1922582

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