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The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices

Lookup NU author(s): Goutan Dalapati, Dr Kelvin Kwa, Dr Sarah OlsenORCiD, Dr Sanatan Chattopadhyay, Professor Anthony O'Neill, Dr Yuk Tsang, Rouzet Agaiby

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Publication metadata

Author(s): Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Tsang YL, Agaiby R

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Unknown

Conference Name: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS)

Year of Conference: 2006

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