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Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices

Lookup NU author(s): Goutan Dalapati, Dr Kelvin Kwa, Dr Sarah Olsen, Dr Sanatan Chattopadhyay, Professor Anthony O'Neill, Dr Yuk Tsang, Rouzet Agaiby


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Publication metadata

Author(s): Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Tsang YL, Agaiby R

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Unknown

Conference Name: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS)

Year of Conference: 2006