Publications by Dr Yuk Tsang - ePrints

Browsing publications by Dr Yuk Tsang.

Newcastle Authors	Title	Year
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull Dr Yuk Tsang Rouzet Agaiby et al.	Nanoscale strain characterisation in patterned SSOI structures	2008
Professor Anthony O'Neill Dr Yuk Tsang Dr Barry Gallacher Dr Sarah Olsen	Piezomobility description of strain-induced mobility	2008
Dr Yuk Tsang Professor Anthony O'Neill Dr Barry Gallacher Dr Sarah Olsen	Using piezoresistance model with C-R conversion for modeling of strain-induced mobility	2008
Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz	Evolution of strain engineering for Si technology	2007
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Enrique Escobedo-Cousin Deepak Ramakrishnan et al.	Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures	2007
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Kelvin Kwa Goutan Dalapati Rouzet Agaiby et al.	Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz	Evolution of strain engineering for Si technology	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Dr Yuk Tsang et al.	Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface	2006