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Browsing publications by Dr Sanatan Chattopadhyay.

Newcastle AuthorsTitleYearFull text
Patrycja Stachelek
Dr Sanatan Chattopadhyay
Emeritus Professor Anthony Harriman
Solvent-Driven Conformational Exchange for Amide-Linked Bichromophoric BODIPY Derivatives2016
Andrew Bryant
Dr Ahmed Elattar
Dr Sanatan Chattopadhyay
Surgical cytoreduction for recurrent epithelial ovarian cancer2013
Dr Patrick Yu Wai Man
Dr Sanatan Chattopadhyay
Philip Griffiths
Professor Patrick Chinnery
A randomized placebo-controlled trial of idebenone in Leber's hereditary optic neuropathy2011
Santosh Shedabale
Dr Gordon Russell
Professor Alex Yakovlev
Dr Sanatan Chattopadhyay
Statistical modelling of the variation in advanced process technologies using a multi-level partitioned response surface approach2008
Dr Rajat Mahapatra
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC2007
Dr Rajat Mahapatra
Peter Tappin
Bing Miao
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
et al.
Impact of interfacial nitridation of HfO2 high-k gate dielectric stack on 4H-SiC2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits2007
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
et al.
Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.
Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices2006
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Sanatan Chattopadhyay
Professor Nick Wright
Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate2006
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
Dr Johan Seger
et al.
Control of self-heating in thin virtual substrate strained Si MOSFETs2006
Arup Saha
Dr Sanatan Chattopadhyay
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique2006
Arup Saha
Dr Sanatan Chattopadhyay
Effect of silicidation on the electrical characteristics of polycrystalline-SiGe Schottky diode2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer2006
John Varzgar
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer2006
Dr Suresh Uppal
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices2006
Dr Ming-Hung Weng
Dr Rajat Mahapatra
Peter Tappin
Bing Miao
Dr Sanatan Chattopadhyay
et al.
High temperature characterization of high-κ dielectrics on SiC2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs2006
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Professor Anthony O'Neill
et al.
Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Yuriy Butenko
Professor Lidija Siller
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si MOSFETs using thin virtual substrates2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si technology2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Strained Si/SiGe MOS technology2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rouzet Agaiby
et al.
Strained silicon technology2006
Dr Sanatan Chattopadhyay
Surface roughness and interface engineering for gate dielectrics on strained layers2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface2006
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode2005
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Barrier In-homogeneities and Carrier Transport in Silicided Schottky Diodes2005
Arup Saha
Dr Sanatan Chattopadhyay
Characterization of Metal-Semiconductor Heterointerface using Capacitance-Voltage Technique2005
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Professor Satnam Dlay
Professor Anthony O'Neill
Design ofsrained silicon inverters for fture VLSI applications2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Doubling speed using strained Si/SiGe CMOS technology2005
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
Effect of annealing on interface state density of Ni-silicided/Si 1-xGex Schottky diode2005
Arup Saha
Dr Sanatan Chattopadhyay
Electrical Characterization of Ni-SiGe and Ni(Pt)-SiGe Schottky Diodes2005
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Goutan Dalapati
et al.
Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness2005
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture2005
Rudra Dhar
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
et al.
Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates2005
Dr Sanatan Chattopadhyay
Arup Saha
Poly-SiGe Schottky2005
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Professor Anthony O'Neill
et al.
Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode2005
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
Dr Jie Zhang
et al.
Strained Si/SiGe CMOS: high performance without re-tooling2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Piotr Dobrosz
Professor Steve Bull
Luke Driscoll
et al.
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors2005
Arup Saha
Dr Sanatan Chattopadhyay
Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering2005
Arup Saha
Dr Sanatan Chattopadhyay
Technology CAD of Silicided Schottky Barrier MOSFETs for Elevated Source Drain Engineering2005
Arup Saha
Dr Sanatan Chattopadhyay
Contact metallization on strained-Si2004
Dr Sarah Olsen
Dr Kelvin Kwa
Luke Driscoll
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Design, fabrication and characterisation of strained Si/SiGe MOS transistors2004
Arup Saha
Dr Sanatan Chattopadhyay
Effect of annealing on interface state density of Ni-silicided Si1-xGex Schottky diodes2004
Arup Saha
Dr Sanatan Chattopadhyay
Effect of Annealing on Interface State Density of Ni-silicided Si1-xGex Schottky Diodes2004
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
Electrical characterization of Niy(Si1-xGe x)1-y/Si1-xGex and NiSi/Si Schottky diodes2004
Arup Saha
Dr Sanatan Chattopadhyay
Electrical characterization of TiSi/Si1-x-yGexCy Schottky diodes2004
Arup Saha
Dr Sanatan Chattopadhyay
Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes2004
Dr Sanatan Chattopadhyay
Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes2004
Dr Sanatan Chattopadhyay
Goutan Dalapati
Arup Saha
Electrical Properties of NiSi/strained-Si Schottky diodes2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS2004
Lynn Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Dr Sanatan Chattopadhyay
On the stability and composition of Ni-silicided Si1-xGex films2004
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs2004
Dr Sanatan Chattopadhyay
Stability and composition of Ni-germanosilicided Si/sub 1-x/Ge/sub x/ films2004
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges2004
Dr Sarah Olsen
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
et al.
Strained Si/SiGe n-channel MISFETs2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs2004
Dr Sarah Olsen
Professor Anthony O'Neill
Professor Steve Bull
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices2004
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Nebojsa Jankovic Professor
Dr Sarah Olsen
Luke Driscoll
et al.
A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture2003
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
et al.
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate Ge composition on strained Si MOSFET performance2003
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
Professor Steve Bull
et al.
Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs2003
Dr Sanatan Chattopadhyay
Interfacial reactions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing2002
Dr Sanatan Chattopadhyay
Thermal reaction of nickel and Si/sub 0.75/Ge/sub 0.25/ alloy2002
Dr Sanatan Chattopadhyay
Thermal reaction of nickel and Si0.75 Ge0.25 alloy2002